The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1994
Filed:
Aug. 26, 1992
Chris Choi, Redondo Beach, CA (US);
David Tam, Redondo Beach, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A circuit and method for driving a power transistor device. The circuit for driving a power transistor device has a driver having an input and an output, the output coupled to a control input of the power transistor device and the input coupled to a primary control voltage source for driving the power transistor device. A current sensing device is coupled to the power transistor device for providing a signal proportional to the current in the power transistor device. An amplifier is coupled to the current sensing device for providing a substantially linear control signal proportional to the current in the power transistor device, the linear control signal being provided to the input of the driver as a secondary drive signal for driving the power transistor device when a current level in the power transistor device greater than a threshold level is detected. A detector is provided for detecting when the current in the power transistor device is greater than the threshold level. The detector is coupled to the current sensing device and to a reference level source, and provides an overcurrent signal to the driver for switching the driver from being driven by the primary control voltage source to the secondary drive signal. The secondary drive signal drives the driver so as to reduce the current level in the power transistor device. The driven power transistor device is preferably a power MOSFET or IGBT.