The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1994
Filed:
Apr. 14, 1993
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A high power FET device includes a plated heat sink, a rear surface electrode disposed between a substrate and the heat sink, a via-hole extending through the substrate and containing a metal plating for electrically connecting the rear surface electrode and an element, such as the source electrode, of the FET device. A metallic layer extending from the rear surface to the front surface of the device protects the side walls of the substrate during handling. The side wall protection layer extends onto portions of the front surface of the substrate as a measurement electrode. The arrangement gives access to the source, drain, and gate electrodes of the device from the front surface for measuring the electrical characteristics of the device while it is still part of a wafer containing a large number of devices. Each device includes a separation groove outwardly spaced from the device and containing a metallic layer which becomes the side wall protection layer after dicing. Preferably, the separation grooves are wider and deeper than the via-holes.