The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1994
Filed:
Mar. 25, 1993
Kimihiro Muraoka, Kanagawa, JP;
Takashige Tamamushi, Tokyo, JP;
Toyo Denki Seizo Kabushiki Kaisha, Tokyo, JP;
Takashige Tamamushi, Tokyo, JP;
Abstract
The present invention has for its object to provide a planar MOS-controlled thyristor of improved main thyristor turn-ON characteristics and a vertical MOS-controlled thyristor of improved main thyristor turn-ON characteristics and increased integration density. In the planar MOS-controlled thyristor a p-channel MOSFET for turning OFF the main thyristor and an n-channel MOSFET for turning it ON are provided in an integrated form and a channel is provided between the cathode region and a high resistance layer. The current in the channel can be controlled by the base or gate potential through utilization of the J-FET or static induction effect. In the vertical MOS-controlled thyristor a vertical p-channel MOSFET for turning OFF the main thyristor and a vertical n-channel MOSFET for turning it ON are provided in an integrated form and a base layer or channel is provided between the cathode region and a high resistivity layer. The current in the base or channel can be controlled by the base or gate potential through utilization of the base resistance effect, J-FET effect, or static induction effect.