The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1994
Filed:
May. 19, 1993
Arun Inam, Somerset, NJ (US);
Ramamoorthy Ramesh, Eatontown, NJ (US);
Charles T Rogers, Jr, Oceanport, NJ (US);
Bell Communications Research, Inc., Livingston, NJ (US);
Abstract
A method, and the resulting structure, of growing a superconducting perovskite thin film of, for example, YBa.sub.2 Cu.sub.3 O.sub.7-x. A buffer layer of, for example, the perovskite PrBa.sub.2 Cu.sub.3 O.sub.7-y, is grown on a crystalline (001) substrate under conditions which favor growth of a,b-axis oriented material. Then the YBa.sub.2 Cu.sub.3 O.sub.7-x layer is deposited on the buffer layer under changed growth conditions that favor growth of c-axis oriented material on the substrate, for example, the substrate temperature is raised by 110.degree. C. However, the buffer layer acts as a template that forces the growth of a,b-axis YBa.sub.2 Cu.sub.3 O.sub.7-x, which nonetheless shows a superconducting transition temperature near that of c-axis oriented films.