The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1994
Filed:
Feb. 28, 1992
Samsung Electronics Co., Ltd., Kyunggi-do, KR;
Abstract
A semiconductor device having a capacitor of large capacitance and the fabrication method thereof are disclosed. The semiconductor device comprises; a first electrode composed of a conductive structure whose entire surface, including sidewalls, are uneven and formed on the semiconductor substrate; a second electrode formed on the first electrode; and a dielectric film formed between the first and second electrodes. Also the method comprises the steps of forming as a first electrode a conductive structure with an uneven surface on a semiconductor structure, forming a dielectric film, and forming a conductive layer as a second electrode on the conductive structure. Accordingly, a capacitor of large capacitance and high reliability can be obtained.