The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 1994
Filed:
Jun. 19, 1993
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257339 ;
Abstract
In a high-breakdown-voltage diode, a high-concentration p-type layer is selectively formed in an n-type silicon layer, and a high-concentration n-type layer is formed in the same separate from the layer by a predetermined distance. An insulation film having a dielectric constant larger than silicon is formed on that portion of the n-type silicon layer which extends between the layers, for relaxing concentration of an electric field caused in the surface of the substrate.
Quick Actions:
Matsushita, Ken'ichi. (1994). High-breakdown-voltage semiconductor element (U.S. Patent No. 5323041). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5323041
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile