The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 1994
Filed:
Aug. 19, 1992
Applicant:
Inventors:
Min-Liang Chen, Hsin, TW;
Pradip K Roy, Allentown, PA (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 41 ; 437101 ; 437239 ;
Abstract
A thin film transistor is formed by depositing amorphous silicon and forming a gate structure and then using a high-pressure oxidation to form a high-quality gate oxide that has a layered structure.