The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 1994

Filed:

May. 13, 1992
Applicant:
Inventors:

Kinya Kamiyama, Hyogo, JP;

Takeshi Fijino, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430324 ; 430325 ; 430326 ; 156628 ; 156643 ; 1566591 ;
Abstract

After a resist layer is formed on a substrate, a predetermined region of resist layer is exposed. A silylated layer is formed in the exposed region of resist layer. After the silylation, a part but not all of the unexposed portion of the resist layer is etched to expose a nonsilylated side portion of the exposed region. The non-silylated side portion of the exposed region uncovered by etching is then silylated. The remainder of the unexposed region is removed, so that a resist pattern is finally obtained. According to the method, a fine resist pattern can be formed without side etch.


Find Patent Forward Citations

Kamiyama, Kinya. (1994). Method for forming a patterned resist (U.S. Patent No. 5322764). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5322764

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…