The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 1994
Filed:
Feb. 07, 1992
Applicant:
Inventors:
Do-chan Choi, Seoul, KR;
Kyung-tae Kim, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyunggi, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257754 ; 257306 ; 257740 ; 257751 ;
Abstract
A method for manufacturing a semiconductor device includes forming contact holes in insulating layers to expose an impurity doped region of a semiconductor substrate. An epitaxial layer is then grown in the contact hole. A polycrystalline silicon layer is formed over the top to provide the lower electrode of a capacitor. Accordingly, the polycrystalline layer is separated from the impurity doped region thereby preventing current leakage.