The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 1994
Filed:
Aug. 22, 1989
Applicant:
Inventor:
Yoshiaki Hisamoto, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257401 ; 257133 ; 257146 ; 257336 ; 257341 ; 257378 ;
Abstract
An insulated gate bipolar transistor comprises an insulation film (7) formed on a channel region (6) and a gate electrode (8) formed on the insulation film (7). The end portion of the gate electrode (8) has recesses so that the gage electrode (8) covers part of the channel region (6) at a predetermined rate. The rate may be made small to increase a channel resistance so that an excessive current at the time of load short-circuiting can be suppressed. In place of the recesses, a step structure may be provided. Further the gate electrode (8) may cover part of the channel region (6) without providing the recesses.