The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 1994

Filed:

Mar. 13, 1992
Applicant:
Inventors:

Hidetoshi Watanabe, Ibaragi, JP;

Toshio Ohoshi, Tokyo, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ; H01J / ;
U.S. Cl.
CPC ...
313309 ; 313351 ;
Abstract

Disclosed herein is an array of field emission cathodes of the type, in which each element is made up of a substrate 1 (which serves as a first electrode 1), an insulating layer 2 in which is formed a cavity 6, a cathode 9 formed in the cavity 6 and on the first electrode 1, and a second electrode 3 formed on the insulating layer 2, and the second electrode is coated with a protective metal layer having good conductivity and corrosion resistance. The record electrode (the gate electrode) protected from oxidation permits stable electron emission. Also disclosed herein is an array of field emission cathodes in which each element is made up of a first electrode 11 to apply voltage to a plurality of cathodes 9, a resistance layer 12, an insulating layer 2, and a second electrode 3 which are formed on top of the other, a cavity 6 formed in the second electrode 3 and insulating layer 2, and a cathode 9 formed in the cavity 6 and on the resistance layer 12, with the first electrode 11 having a void under the cathode 9. This structure prevents short circuits between the cathode and the gate electrode, which contributes to high yields and long life.


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