The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1994
Filed:
Aug. 13, 1992
Kazuo Kihara, Yokohama, JP;
Hiroyuki Nakazawa, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A composite semiconductor element includes a semiconductor substrate having a single crystal region projecting in the form of an island, an epitaxial growth layer formed on the semiconductor substrate so as to surround the single crystal region, an insulating isolation layer formed in predetermined regions of the epitaxial growth layer, of the single crystal region, and of the semiconductor substrate so as to insulate/isolate the epitaxial growth layer and the single crystal region from each other and to form a plurality of island-like element regions in the epitaxial growth layer and in the single crystal region, an n-channel MOS transistor and a CCD element respectively formed in element regions in the single crystal region, and a p-channel MOS transistor and a bipolar element respectively formed in element regions in the epitaxial growth layer.