The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1994
Filed:
Mar. 12, 1992
Applicant:
Inventors:
Jerome F Lapham, Groton, MA (US);
Adrian P Brokaw, Burlington, MA (US);
Assignee:
Analog Devices, Incorporated, Norwood, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257270 ; 257285 ; 257740 ; 257751 ;
Abstract
A low-leakage-current JFET having electrically isolated top and bottom gates. The structure employs enclosed geometry wherein one source/drain region fully surrounds the other source/drain region. Connection to the top gate is made through a diffusion-barrier to prevent penetration of metallization into the top gate contact region. A non-penetrating contact layer is provided on the upper surface of the top gate so that the material of the contact layer does not enter the top gate region to any significant extent. Both the channel region and the shield layer are formed by ion-implantation.