Capacitance transducer article and method of fabrication

Abstract

A capacitance transducer has a first hermetically sealed cavity adapted to deform in response to an applied force, such as pressure or acceleration, and a second hermetically sealed cavity adapted to resist deformation in response to such applied force. The cavities are formed between two doped silicon layers separated by a selectively etched electrically insulating spacer layer. Multiple medial electrically insulating cavity area spacer segments within the second cavity resist deformation thereof in response to the applied force to be measured. The capacitance transducer can be manufactured from doped silicon wafers using well developed silicon wafer processing techniques.