The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 1994

Filed:

Jan. 12, 1993
Applicant:
Inventors:

Charles L Vinn, Mipitas, CA (US);

Yihe Huang, Palo Alto, CA (US);

Assignee:

Raytheon Company, Lexington, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330265 ; 330 85 ;
Abstract

A circuit for increasing the slew rate of linear amplifier circuits. The circuit comprises two NPN and PNP transistor pairs arranged so that when the voltage level difference between the amplifier output and input voltage exceeds the base to emitter voltage of such transistors, the circuit is activated. The circuit provides a current proportional to such voltage difference in order to speed up the charging or discharging of the slew rate determining capacitance.


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