The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1994
Filed:
Jun. 17, 1993
Hirofumi Watanabe, Miki, JP;
Noriyuki Terao, Sendai, JP;
Ricoh Company, Ltd., Tokyo, JP;
Ricoh Research Institute of General Electronics Co., Ltd., Natori, JP;
Abstract
A method for manufacturing a C-MOS thin film transistor device has the steps of implanting the n-type impurity only in the upper layer portion of the source-drain section of the n-channel transistor by controlling implantation energy of the n-type impurity; implanting the p-type impurity in the source-drain section and the gate electrode of the p-channel transistor, and the source-drain section and the gate electrode of the n-channel transistor by controlling implantation energy of the p-type impurity; and activating the implanted n-type and p-type impurities in the source-drain section of the n-channel transistor, and activating the implanted p-type impurity in the source-drain section and the gate electrode of the p-channel transistor and gate electrode of the n-channel transistor. The n-type and the p-type may be respectively changed to the p-type and the n-type in the above construction.