The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 1994

Filed:

May. 07, 1991
Applicant:
Inventors:

Donald E Patterson, Houston, TX (US);

Robert H Hauge, Houston, TX (US);

C Judith Chu, Houston, TX (US);

John L Margrave, Houston, TX (US);

Assignee:

Houston Advanced Research Center, The Woodlands, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427249 ; 4272551 ; 427122 ; 427314 ; 423446 ; 428408 ;
Abstract

The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen, (3) a halogen and, preferably, (4) a chalcogen through a reactor over the substrate material. The reactant gases may be premixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pretreatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.


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