The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1994
Filed:
Dec. 11, 1992
Applicant:
Inventors:
David S Wisherd, Sunnyvale, CA (US);
William H McCalpin, Sunnyvale, CA (US);
Assignee:
Spectrian, Inc., Mountain View, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330277 ; 330294 ; 330306 ;
Abstract
An RF power FET amplifier is designed using parasitic resonant matching to reduce low intermodulation distortion. An input inductor is connected in parallel with the capacitance of the common-source input capacitance, an output inductor is connected in parallel with the common-source output capacitance. Feedback provided by the common-source capacitance between gate and drain is utilized to improve linearization and stability. The field effect transistor is designed so that the feedback signal resulting from the feedback capacitance is 180.degree. with respect to the forward gain.