The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1994
Filed:
Jul. 08, 1993
Applicant:
Inventor:
Kazuhiko Tsuji, Nara, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257351 ; 257365 ; 257369 ; 257401 ;
Abstract
In a CMOS semiconductor device, a first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on a first plane. A second MOS type device, comprising a second source region, a second channel region and a second drain region is arranged on a second plane above the first MOS type device, with an insulator layer interposed between the two devices. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.