The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 1994

Filed:

May. 16, 1989
Applicant:
Inventors:

Alan D Berry, Springfield, VA (US);

David K Gaskill, Alexandria, VA (US);

Ronald T Holm, Alexandria, VA (US);

Edward J Cukauskas, Vienna, VA (US);

Raphael Kaplan, Arlington, VA (US);

Richard L Henry, Fort Washington, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; B05D / ;
U.S. Cl.
CPC ...
505447 ; 505734 ; 505730 ; 505742 ; 427 62 ; 4272553 ; 4272552 ; 4272551 ; 4271263 ;
Abstract

A CVD process for forming a layer or layers of superconducting materials on a semiconductor substrate in which volatile organometallic compounds of bismuth, strontium, calcium and copper are heated in the presence of a carrier gas in a first chamber free of hydrolyzing agents. Under conditions free of hydrolyzing agents, the carrier gas transports a predetermined quantity of the volatile organometallic compounds of the bismuth, strontium, calcium and copper to a deposition chamber. The compounds are decomposed and deposit mixed oxides on the substrate. Subsequent to deposition of the mixed oxides of the desired elements the layer is sintered in an oxygen-rich atmosphere, and formed into a superconducting film by subsequent slow cooling still in an oxygen-rich atmosphere.


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