The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1994
Filed:
Sep. 15, 1992
James P Lavine, Rochester, NY (US);
Eastman Kodak Company, Rochester, NY (US);
Abstract
The disclosure is directed to a method of forming a CCD with two sets of gate electrodes in a single layer of a conductive material. The method comprises forming a channel region in a body of a semiconductor material along a surface thereof and forming a layer of conductive material over and insulated from the surface of the body. A first masking layer is formed on the conductive layer and spaced strips of polycrystalline silicon are formed on the first masking layer. Using a portion of the spaces between the strips as a mask, impurities of a conductivity type opposite that of the channel region are embedded in the channel region to form spaced barrier regions along the channel region. A layer of silicon dioxide is formed over each of the strips and the spaces between the strips are filled with polycrystalline silicon. The portion of the silicon dioxide layer at one end of each of the strips is etched away to expose a portion of the first masking layer. The exposed portions of the first masking layer are etched away to form grooves through the first masking layer to the conductive layer. The portions of the conductive layer at the bottom of the grooves are then etched away to define the conductive layer into closely spaced gate electrodes.