The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1994
Filed:
Dec. 22, 1992
Applicant:
Inventors:
Didier Pribat, Sevres, FR;
Pierre Leclerc, Voisins-Le-Bretonneux, FR;
Pierre Legagneux, Le Mesnil St Denis, FR;
Christian Collet, Limours, FR;
Assignee:
Thomson-CSF, Puteaux, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03B / ;
U.S. Cl.
CPC ...
117 75 ; 117931 ; 117939 ;
Abstract
A method of growth according to which a layer of a material having apertures is made on the surface of a substrate. A material is deposited in each aperture. When this material is liquid, it can absorb the material to be grown. Then, the growth is done in vapor phase. The material of the layer is chosen in such a way that there is neither growth nor nucleation on its surface during the growth in vapor phase. The disclosed method can be applied to the making of crystal whiskers positioned with precision, and to the making of tip type microcathodes.