The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1994
Filed:
Jul. 01, 1991
Applicant:
Inventor:
Takenori Morikawa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257577 ; 257554 ; 257560 ; 257563 ; 257571 ; 257588 ;
Abstract
A semiconductor device including a semiconductor substrate, first and second bipolar transistors formed at the major surface of the semiconductor substrate, a Schottky-barrier diode formed on a predetermined area of each of the first and second bipolar transistors, a capacitor formed on each of the first and second bipolar transistors, each capacitor including an insulating layer covering a surface of a respective one of the first and second bipolar transistors, a polysilicon layer formed on the insulating layer in a pattern that extends around the predetermined area, a dielectric film formed covering the polysilicon layer, and a conductive film covering the dielectric film.