The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1994
Filed:
Dec. 02, 1992
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257101 ; 257102 ; 257103 ;
Abstract
This invention is a multi-layer pn type silicon carbide light emitting diode. A first n-type silicon carbide layer is deposited on an n-type substrate. The first n-type silicon carbide layer has an electron concentration larger than 1.times.10.sup.15 cm.sup.-3 and smaller than the electron concentration of the substrate and has a thickness of between 0.1 to 20 .mu.m. A second n-type silicon carbide layer is disposed over the first n-type layer. A first p-type silicon carbide layer is disposed on the second n-type layer to form a PN junction layer.