The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1994
Filed:
May. 28, 1992
Applicant:
Inventors:
Kanetake Takasaki, Kawasaki, JP;
Satoshi Nakai, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437235 ; 437225 ; 437228 ; 437243 ;
Abstract
A process for the preparation of a high dielectric thin film. A tantalum oxide film is formed on a substrate at a temperature of from 400.degree. to 850.degree. C. by means of an electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method. A high dielectric film having little leakage current, good surface flatness and good step coverage is obtained.
Takasaki, Kanetake. (1994). Process for the preparation of a high dielectric thin film using ecr (U.S. Patent No. 5312783). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5312783
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile