The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 1994

Filed:

May. 28, 1993
Applicant:
Inventors:

Clifford I Drowley, Mesa, AZ (US);

James A Teplik, Mesa, AZ (US);

Erik W Egan, Phoenix, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 20 ; 437 25 ; 437 26 ; 437 29 ; 437 97 ; 437141 ; 437248 ; 437952 ; 148D / ; 148D / ;
Abstract

A method of decoupling a step for modulating a defect density from a step for modulating a junction depth. A semiconductor substrate (30) having a portion doped with a dopant (34) is heated to a pre-oxidation anneal temperature in a pre-oxidation anneal step (23). After the pre-oxidation anneal step (23), the semiconductor substrate (30) undergoes an oxidation step (25) which serves as a step for modulating the defect density. Subsequent to the oxidation step (25), the semiconductor substrate (30) undergoes a drive-in step (27) which serves as a step for modulating the junction depth. Then, the temperature of the semiconductor substrate (30) is lowered to allow further processing of the semiconductor substrate (30).


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