The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1994
Filed:
Jan. 12, 1993
Satoru Taji, Sanda, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A semiconductor memory device has a diffusive region for a source formed in the shape of a band on a substrate; a diffusive region for a drain formed in the shape of a band in parallel with the diffusive region for a source and alternated with this diffusive region for a source; a first word line layer formed such that the first word line layer crosses the diffusive regions for a source and a drain; and a second word line layer formed in parallel with the first word line layer. The semiconductor memory device further has a channel region including an a-region on a substrate surface located on the lower side of a flat portion within a region prescribed between the diffusive regions for a source and a drain; and two b-regions on the substrate surface arranged on both sides of the a-region and located on the lower sides of first and second side wall portions.