The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1994
Filed:
Jul. 31, 1991
Toshiro Takahashi, Ohme, JP;
Kazuo Koide, Iruma, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Herein disclosed is a semiconductor integrated circuit device, in which a buffer circuit having a MISFET of a second conduction type and arranged in a first region of the principal plane of a semiconductor substrate of a first conduction type is supplied with a first supply voltage and in which an internal circuit having a complementary MISFET and arranged in a second region of the principal plane of the semiconductor substrate different from the first region is supplied with a second supply voltage independent of the first supply voltage at least over the semiconductor substrate and having a potential equal to that of the first supply voltage. The MISFET of the buffer circuit is formed in the principal plane of a well region of a first conduction type formed in the principal plane of the semiconductor substrate. Between the well region of the first conduction type and the semiconductor substrate, there is formed a separating region for separating the two electrically.