The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1994
Filed:
May. 06, 1992
Applicant:
Inventor:
Anthony Sayka, San Antonio, TX (US);
Assignee:
VLSI Technology, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430311 ; 430322 ; 430323 ; 430327 ; 430313 ;
Abstract
A photolithographic process involves the use of plasma to effect a superficial etch of a semiconductor wafer prior to the application of photoresist. Photoresist is applied directly on the wafer, without using an adhesion promotor. The photoresist is then exposed to patterned light. After exposure, the photoresist is developed leaving the desired photoresist mask on the wafer. Due to the superficial etch, curling of the photoresist is minimized, enhancing the selective protection provided by the photoresist to the wafer below.