The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 1994
Filed:
Aug. 21, 1992
NEC Corporation, Tokyo, JP;
Abstract
In a semiconductor laser, an active layer includes a semiconductor layer having the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction. By the action of the ordered structure, the electric vector of the recombination light generated in the active layer is concentrated in the (-1,1,1) plane or the (1,-1,1) plane. Alternatively, the semiconductor layer has not only the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction, but also the compressive strain in the (0,0,1) plane. By the action of the ordered structure and the compressive strain, the recombination light generated in the active layer is emitted in the (1,1,0) plane. As a result, the recombination light effectively gives a gain to the oscillation mode. Thus, the oscillation threshold current of the semiconductor laser is reduced, and the laser characteristics is improved.