The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 1994

Filed:

Aug. 10, 1990
Applicant:
Inventor:

Men-Chee Chen, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R / ; G01R / ;
U.S. Cl.
CPC ...
3241 / ; 3241 / ; 3241 / ;
Abstract

A system and method for testing the properties of semiconductor material including an enclosed chamber, a sample of semiconductor material under test having a polished surface portion and insulator layer over the polished surface portion supported in the chamber, a spring probe disposed within the chamber impinging against the insulator layer, a contact disposed on a surface portion of the semiconductor material under test, a pair of contacts disposed external to the chamber, each of the pair of contacts coupled to a different one of the contact and the spring probe and a container supporting the chamber and containing a cryogenic material therein surrounding the chamber. The semiconductor material is preferably a group II-VI composition, preferably HgCdTe. The contact disposed on the surface portion of the semiconductor material is preferably indium. A support, preferably sapphire, is provided for the sample. In a second embodiment, the support for the material under test is controllable for movement in a plane normal to the probe.


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