The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 1994

Filed:

Oct. 13, 1992
Applicant:
Inventors:

Toshiji Suzuki, Machida, JP;

Shigeyuki Matsumoto, Atsugi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257446 ; 257462 ;
Abstract

A photoelectric conversion device has a plurality of photoelectric conversion cells, each cell having a semiconductor transistor comprising two main electrode regions made of one conductive type semi-conductor and a control electrode region made of another conductive type semiconductor and a capacitor for controlling the control electrode region at a floating state, the potential at the control electrode region at a floating state being controlled by means of the capacitor so that carriers generated by light are stored in the control electrode region and the output of each cell is controlled in accordance with the storage voltage generated by the storage. In such a photo-electric conversion device, an isolation region for electrically insulating adjacent photoelectric conversion cells includes an insulation region and a semiconductor region of high impurity density formed beneath the insulation region; and the semiconductor region of high impurity density is made of the same conductive type semiconductor as the main electrode regions.


Find Patent Forward Citations

Loading…