The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 1994

Filed:

Sep. 24, 1992
Applicant:
Inventor:

John L Nistler, Martindale, TX (US);

Assignee:

Advanced Micro Devices, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430320 ; 430321 ; 430322 ; 430323 ;
Abstract

A combination of optimized layouts using a defect voting technique and the etched quartz approach is used to obtain a high probability of obtaining defect-free printing masks, or reticles 10. The defect voting technique as used herein refers to a technique whereby multiple patterns are overlaid in such a way as to get a partial etch each time. Voting the phase shifter layers reduces the probability of defect printability from the reticle onto a semiconductor wafer. Modeling, using SPLAT, shows the effect of the phase transitions on defect printability, along with the probability of defects 16, 20, 24 printing using the voting technique. Thus, while the mask may not be free of defects, these defects do not print on the wafer.


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