The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 1994
Filed:
Sep. 10, 1992
Applicant:
Inventor:
Chenson K Chen, Weston, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117222 ; 118641 ; 373139 ; 117933 ;
Abstract
Wafers of silicon-on-insulator (SOI) produced by the zone melting recrystallization technique are known to exhibit warping and edge defects which prohibit their use in automated silicon wafer processing equipment. These deficiencies arise from excess heat buildup at the periphery of the wafer because the wafer edge acts as a barrier to heat transfer. Dissipation of heat from the edge by varying the heat dissipation efficiency of the environment about the periphery of the wafer allows wafers with substantially fewer defects to be produced.