The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1994
Filed:
Jan. 13, 1993
Hiroshi Adachi, Hyogo, JP;
Hirozoh Kanegae, Hyogo, JP;
Hiroshi Mochizuki, Hyogo, JP;
Masanori Obata, Hyogo, JP;
Takemi Endoh, Hyogo, JP;
Kimio Hagi, Hyogo, JP;
Shigeru Harada, Hyogo, JP;
Kazuhito Matsukawa, Hyogo, JP;
Akira Ohhisa, Hyogo, JP;
Etsushi Adachi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention is mainly characterized by providing an even surface of an interlayer insulating film for insulating and isolating an upper interconnection and a lower interconnection from each other. A lower interconnection layer is provided on a semiconductor substrate, having a pattern of stepped portions. A silicon type insulating film is provided on the semiconductor substrate so as to cover the lower interconnection layer. A silicon ladder resin film is filled in recessed portions of the surface of the silicon type insulating film for making even the surface of the silicon type insulating film. An upper interconnection layer electrically connected to the lower interconnection layer through a via hole is provided on the silicon type insulating film. The silicon ladder resin film has the structural formula: ##STR1## where R.sub.1 is at least one of a phenyl group and a lower alkyl group, R.sub.2 is at least one of a hydrogen atom and a lower alkyl group, and n is an integer of 20 to 1000.