The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1994
Filed:
Oct. 16, 1991
Koji Shirai, Kitahyushu, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A lateral MOSFET includes a back gate region, a part of its surface being a channel region. The back gate region surrounds the drain region, while being in contact with a part of the periphery of the drain region. With this configuration, when a high voltage electrostatic surge appears at the drain electrode, a surge current will disperse from the drain region toward the surrounding back gate region. As a result, a rise in the electric potential at the drain region is suppressed. Thus, the electric potential will not exceed the dielectric strength of the gate insulating film to suppress a breakdown of the gate insulating film and an electrostatic breakdown of the device.