The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 1994

Filed:

Mar. 05, 1993
Applicant:
Inventors:

Masashi Usami, Tanashi, JP;

Yuichi Matsushima, Tokorozawa, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 18 ; 257 15 ; 257 17 ; 257185 ; 257190 ; 257191 ; 372 43 ;
Abstract

A semiconductor device with a strained-layer superlattice is disclosed, in which a first semiconductor and a second semiconductor of a lattice constant smaller than that of the first semiconductor are stacked on a clad layer of a lattice constant substantially intermediate between those of the first and second semiconductors to form the strained-layer superlattice. The lattice constant of the strained-layer superlattice in the direction of its plane in the free space is nearly equal to the lattice constant of the clad layer. A third semiconductor of a lattice constant substantially equal to that of the clad layer is laminated between the first and second semiconductors stacked one on the other.


Find Patent Forward Citations

Loading…