The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1994
Filed:
Oct. 06, 1993
Kazutaka Manabe, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
As a stack of a patterned film and an overlying conductor film, a conductor pattern is manufactured on an isolation layer of a semiconductor device by forming a two-film layer of a first conductor film and a semiconductor film, patterning the two-film layer in compliance with the conductor pattern into a patterned layer consisting of the patterned film and a semiconductor pattern and having a layer side surface, forming an insulator side wall on the side surface, etching away the semiconductor pattern, and selectively forming a second conductor film as the overlying conductor film. The side wall is used in preventing, when the second conductor film is selectively grown, undesirable lateral growth. Typically, the first and the second conductor films are made of aluminium to thicknesses of 200 and 400 nm and the semiconductor film, of polysilicon to a thickness of 400 nm.