The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1994
Filed:
May. 20, 1992
Takaho Tanigawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor memory device having a cell structure capable of maintaining a capacitance of a stacked capacitor at a satisfactory level, which is characterized in that in the first aspect, an insulation layer of an oxide film is formed on an upper surface of a polysilicon gate electrode and a side-wall of an oxide film is formed on the side surface thereof, and in the second aspect, after opening a storage electrode contact, another side-wall of an oxide film Is formed thereon. Accordingly, the space between the storage electrode contact and the polysilicon gate electrode can be made zero (0), that is, in a self-alignment form, resulting in a reduction in the necessary planar surface area of a memory cell to about 5 .mu.m.sup.2 or less.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile