The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1994
Filed:
Aug. 29, 1991
Tadashi Ozawa, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A semiconductor device comprises a semiconductor substrate of a first conductivity type; an epitaxial layer of a second conductivity type formed on the semiconductor substrate; an impurity diffusion layer of the second conductivity type embedded between the semiconductor substrate and the epitaxial layer and having an impurity concentration greater than that of the epitaxial layer; a resistance region reaching the impurity diffusion layer from a surface of the epitaxial layer and extending substantially vertically to the surface of the epitaxial layer; an insulating film defining the resistance region; and a lead region selectively formed between the surface of the epitaxial layer and the impurity diffusion layer.