The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1994
Filed:
Jun. 06, 1991
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K / ;
U.S. Cl.
CPC ...
21912143 ; 21912141 ; 156643 ; 156646 ; 20429838 ;
Abstract
Fine processing is performed by using gas which contains halogen in such a manner that halogen ions contributing to an etching process and ions of a light element, the mass of which is smaller than that of the halogen ion and which does not react with a semiconductor wafer, are present in a plasma generated due to electron cyclotron resonance. Since energy in the plasma is in inverse proportion to the mass, the disorder motion of the halogen ions having large mass can be restrained. Therefore, the halogen ions can be made perpendicularly incident upon the surface of the semiconductor wafer. Consequently, etching process revealing high anisotropy can be performed.