The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1994
Filed:
Mar. 11, 1992
Applicant:
Inventors:
Richard P Vasquez, Altadena, CA (US);
Brian D Hunt, Pasadena, CA (US);
Marc C Foote, Montrose, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B05D / ; H01B / ;
U.S. Cl.
CPC ...
505190 ; 257 35 ; 257 33 ; 505702 ; 505785 ; 427 62 ;
Abstract
Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO.sub.3, CaVO.sub.3, and SrVO.sub.3 are grown on electron-type high temperature superconductors such as Nd.sub.1.85 Ce.sub.0.15 CuO.sub.4-x. Alternatively, transition metal bronzes of the form A.sub.x MO.sub.3 are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO.sub.3 are grown on either hole-type or electron-type high temperature superconductors.