The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1994
Filed:
Feb. 24, 1992
Nouredine Bouadma, Gentilly, FR;
Abstract
A process is disclosed for producing a buried stripe semiconductor laser using dry etching. According to the present invention, a heterostructure is formed by a first epitaxy, during which, on a substrate is deposited a confinement layer having a first doping type, an active layer and a protection layer. The protection layer and the active layer are etched by a reactive ion beam etching method using a gaseous mixture of argon, methane and hydrogen and this takes place down to the confinement layer, so as to form a stripe from the active layer. The stripe is buried by a second epitaxy in a semiconductor layer having a second type of doping which is the opposite of the first. Particular utility is found in the area of optical telecommunications, although other utilities are contemplated.