The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1994
Filed:
Jun. 02, 1992
Applicant:
Inventors:
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B / ; C04B / ;
U.S. Cl.
CPC ...
501 86 ; 501152 ; 501126 ; 501123 ; 501102 ; 501108 ; 252 / ; 156D / ; 156D / ; 156D / ; 1566205 ;
Abstract
A method of growing mixed crystals having at least two lattice sites each having a different number of adjacent oxygen ions from melts of oxidic multi-component systems, homogeneous mixed crystals being grown such that the cations intended to occupy the first lattice site having the highest number of adjacent oxygen ions and to occupy the second lattice site having the next lowest number of adjacent oxygen ions are chosen such that the ratio of the bond length of the cations in the first lattice site to the bond length of the cations in the second lattice site is in the range from 0.7 to 1.5.