The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1994
Filed:
Dec. 17, 1992
James P Lavine, Rochester, NY (US);
Eastman Kodak Company, Rochester, NY (US);
Abstract
A charge coupled device (CCD) has a single level electrode of single crystalline silicon on an insulating layer over a surface of a body of single crystalline silicon. The CCD is made by forming a layer of insulating material on a surface of a body of single crystalline silicon with a portion of the surface being exposed. A layer of single crystalline silicon is then epitaxially grown by epitaxial lateral overgrowth on the exposed surface of the body and over the insulating material layer. The layer of single crystalline silicon is removed from the surface of the body to insulate the single crystalline silicon layer from the body by the insulating material layer. Portions of the layer of single crystalline silicon are removed to form a plurality of separate gate electrodes.