Semiconductor memory device with bipolar-fet sense amp

Abstract

A semiconductor memory device, includes a memory cell array, a row decoder connected to the memory cell array by a plurality of word lines for selecting a word line in response to a first address signal supplied thereto, a column decoder connected to the memory cell array by a plurality of bit lines for selecting a bit line in response to a second address signal supplied thereto, and a data discrimination unit connected to the column decoder by a common data bus for producing an output data signal indicative of the data stored in the addressed memory cell. The column decoder includes a plurality of sense amplifiers each connected to a corresponding bit line for selecting an addressed bit line. The plurality of sense amplifiers are connected to a common data bus for carrying data stored in the addressed memory cell. A plurality of switching devices are provided in correspondence to the plurality of sense amplifiers for selectively transferring the data detected by the sense amplifier to the common data bus. Wherein each of the switching devices includes a bipolar transistor having a collector connected to a power voltage source, an emitter connected to the common data bus, and a base connected to the corresponding sense amplifier for receiving the output signal of the sense amplifier indicative of the data.