The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 1994
Filed:
Jul. 16, 1992
Allen F Podell, Palo Alto, CA (US);
Edward B Stoneham, Los Altos, CA (US);
Pacific Monolithics, Sunnyvale, CA (US);
Abstract
A depletion-mode MESFET is connected between an RF input terminal and ground. The gate is connected to a negative reference voltage via a bias resistor and to ground via a capacitor. A detector couples the input terminal to the gate and includes first and second series diodes and a second resistor connected from between the first and second diodes to ground. A coil is connected between the input terminal and an output terminal connected to a GaAs integrated circuit. A Schottky diode limiter is connected to the output terminal for limiting the voltage of both positive and negative polarities that leak to the output terminal from the transistor.