The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 1994
Filed:
Jun. 03, 1993
Yasuhisa Hirabayashi, Suwa, JP;
Takashi Sakuda, Suwa, JP;
Kazuhiko Okawa, Suwa, JP;
Yasuhiro Oguchi, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
Disclosed is a semiconductor device having complementary metal insulator semiconductor field-effect transistors (MISFETs) in which a plurality of basic cells having N-channel MOSs and P-channel MOSs are disposed. In this semiconductor device, a sub MISFET is disposed adjacently to a stopper layer in a region adjacent to other basic cell. An element such as a transmission gate composed of a single element can be actualized by use of the sub-MISFET. In the semiconductor device of this invention, a working efficiency thereof is improved. A response velocity of the P-channel MOS can also be improved using the sub-MISFET. A numerical quantity of the basic cells constituting a circuit can be reduced, resulting in a reduction in parasitic capacity. An operating time of the circuit is thereby decreased.