The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 1994
Filed:
Feb. 08, 1993
Applicant:
Inventors:
Steven L Merchant, Yorktown Heights, NY (US);
Emil Arnold, Chappaqua, NY (US);
Assignee:
North American Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01C / ;
U.S. Cl.
CPC ...
437 41 ; 437 21 ; 437 27 ; 437909 ;
Abstract
The present invention is directed to a method and thin film transistor having a linear doping profile between the gate and drain regions. This is constructed in a particular manner in order to achieve a thin film transistor having a significantly high breakdown voltage of the order of 700 to 900 volts, much greater than that achieved in the prior art.