The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 1994
Filed:
Mar. 10, 1992
Applicant:
Inventor:
Richard A Lowden, Powell, TN (US);
Assignee:
Martin Marietta Energy Systems, Inc., Oak Ridge, TN (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ; C23C / ;
U.S. Cl.
CPC ...
427255 ; 4272551 ;
Abstract
A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.
Lowden, Richard. (1994). Molybdenum enhanced low-temperature deposition of crystalline silicon (U.S. Patent No. 5300322). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5300322
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile